类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QU128ABA8E12-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS42SM16800H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
25AA040/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
71V546S100PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC4M16A2P-6A:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY7C1365C-133BZIRochester Electronics |
CACHE SRAM, 256KX32, 6.5NS, CMOS |
|
S25FL127SABMFI000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
SST39VF200A-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
MT29F256G08CECEBJ4-37ITR:EMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
24FC64F-I/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8DIP |
|
7132LA100CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
25AA640A-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
TMS6789-20DJRochester Electronics |
STANDARD SRAM, 16KX4, 20NS |