类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 500 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
0436A8ACLAA-5HRochester Electronics |
8MBIT (256K X 36) SRAM |
|
93LC46BX/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
S25FL064LABMFM013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
AS4C32M16D1-5BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY62128BNLL-55SIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY7C199CN-12VXATRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W632GG8NB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
93AA66-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
SST25PF040C-40V/SNRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
70V7339S133BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C1381B-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
IS34MW02G084-TLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
25LC080AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |