English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62128BNLL-55SIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY7C199CN-12VXATRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W632GG8NB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
93AA66-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
SST25PF040C-40V/SNRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
70V7339S133BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C1381B-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
IS34MW02G084-TLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
25LC080AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CAT28C64BNI12Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
IS42S16160G-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT24C32E-PUMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8DIP |
|
MT29F1G08ABAEAWP:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
