类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V7339S133BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C1381B-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
IS34MW02G084-TLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
25LC080AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CAT28C64BNI12Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
IS42S16160G-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT24C32E-PUMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8DIP |
|
MT29F1G08ABAEAWP:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
MT46V16M8TG-6T IT:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
S25FL256SAGBHIA00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY62167DV30LL-55BVXITRochester Electronics |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CAT24C164YI-GRochester Electronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
DS2505+T&RMaxim Integrated |
IC EPROM 16KBIT 1-WIRE TO92-3 |