类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62167DV30LL-55BVXITRochester Electronics |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CAT24C164YI-GRochester Electronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
DS2505+T&RMaxim Integrated |
IC EPROM 16KBIT 1-WIRE TO92-3 |
|
GS8642Z36GB-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 119FPBGA |
|
S26KS512SDABHA030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
AS7C34096A-15TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS42S32800G-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY14ME064Q1B-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
CY7C1362A-166BGCRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
CY62157DV30L-55ZSIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
25AA160A-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
M48Z35Y-70PC1STMicroelectronics |
IC NVSRAM 256KBIT PAR 28PCDIP |
|
CY7C024AV-25ACRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |