类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S32800G-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY14ME064Q1B-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
CY7C1362A-166BGCRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
CY62157DV30L-55ZSIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
25AA160A-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
M48Z35Y-70PC1STMicroelectronics |
IC NVSRAM 256KBIT PAR 28PCDIP |
|
CY7C024AV-25ACRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
S29GL128S90FHSS43Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
NV93C86BMUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8UDFN |
|
AS7C32096A-15TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
CY27C512-90JIRochester Electronics |
OTP ROM, 64KX8, 90NS PQCC32 |
|
IS46TR16256BL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
GS8320Z18AGT-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 100TQFP |