类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V3557S85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V2556SA100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V424L12PHGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL01GP12FAI020ARochester Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
W978H6KBVX2EWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 134VFBGA |
|
71V547S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62148ELL-55SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32SOIC |
|
GS8640Z36GT-300IGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
RMLV0416EGSB-4S2#HA0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
SST38VF6404-90-5I-EKERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
71V3556SA166BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
25LC160C-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY14B256LA-ZS25XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 44TSOP II |