类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V424L15PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C144-15AXCRochester Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
IS62WV12816BLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
70V08L20PFGIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MX25L3233FZBI-08GMacronix |
IC FLASH 32MBIT SPI/QUAD 8USON |
|
AS7C316096B-10BINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
R1EX24016ATA00I#S0Rochester Electronics |
EEPROM, 2KX8, SERIAL |
|
IS46DR16320E-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
IS64WV25616EDBLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S25FL512SAGMFI013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
24LC08BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
S27KL0641DABHV023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
R1LV0108ESN-7SR#S0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |