English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70261L15PFG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S25FL032P0XMFV011Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
71V3557S80BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CAT25160YI-GRochester Electronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C187-15VXCRochester Electronics |
STANDARD SRAM, 64KX1, 15NS |
|
FM27C010Q90Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32CDIP |
|
TH58BYG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 67VFBGA |
|
SM671PEE ADS TU115Silicon Motion |
FERRI-UFS 256GB 3D TLC + EXT. TE |
|
CY7C1366C-166AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V424L10PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
24LC65-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
CY14B101KA-ZS25XIRochester Electronics |
IC NVSRAM 1MBIT PAR 44TSOP II |
|
IS43LR16320B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
