类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC16BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
93LC66C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
BR25H020FVM-2CTRROHM Semiconductor |
IC EEPROM 2KBIT SPI 10MHZ 8MSOP |
|
CY14B256KA-SP45XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
AT45DQ321-MHF-YAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8UDFN |
|
JS28F128P30B85ARochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
GS8673EQ36BGK-675IGSI Technology |
IC SRAM 72MBIT PARALLEL 260BGA |
|
IS42SM16800H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
71016S20PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
71V67903S75PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1357A-100ACTRochester Electronics |
SRAM CHIP SYNC SINGLE 3.3V 9M BI |
|
AM27C256-55PCRochester Electronics |
OTP ROM |
|
IS42S16400J-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |