类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F1T08EEHAFJ4-3T:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
GD25Q127CSJGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8SOP |
|
DS2431+T&RMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE TO92-3 |
|
IS46R16320D-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CAT25040YI-GRochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
71V016SA12PHGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
FM24CL04B-GRochester Electronics |
MEMORY CIRCUIT, 512X8 PDSO8 |
|
71V67602S133BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
93C56BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
M24C08-RMC6TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MLP |
|
CY7C1518KV18-300BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1353S-100AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
RMLV3216AGSD-5S2#AA0Renesas Electronics America |
IC SRAM 32MBIT PAR 52TSOP II |