English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
041841QLAD-7Rochester Electronics |
256KX18 SRAM |
|
71256L25YGIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
FM24C05UNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
93C86C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
S29GL256P90TFCR10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
93LC76T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
71024S20YRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
BR24C08-RMN6TPROHM Semiconductor |
IC EEPROM 8KBIT I2C 100KHZ 8SO |
|
GS8128018GT-250IGSI Technology |
IC SRAM 144MBIT PARALLEL 100TQFP |
|
W29N02KVBIAFWinbond Electronics Corporation |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
CY7C25652KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS7C1024B-15TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
24FC64-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8MSOP |
