English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.6V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.173", 4.40mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L256V32PF-6Rochester Electronics |
IC SRAM 8MBIT PARALLEL 165FBGA |
|
70V7519S200BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
25LC020AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI SOT23-6 |
|
CY7C2665KV18-450BZXICypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
CY14B256LA-SP45XIRochester Electronics |
NON-VOLATILE SRAM, 32KX8, 45NS P |
|
70V3389S4BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
IS64WV10248EDBLL-10CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
W947D2HBJX6EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
W9425G6JB-5 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
S25FL064LABMFM003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
24AA044T-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
SST39VF1682-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
CY62128ELL-55SXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOIC |
