English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 64Mb (8M x 8, 4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C4M32MSA-6BINTRAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 90FBGA |
|
MX29LV320ETTI-70GMacronix |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
SST38VF6401-90-5C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
GS81314LD37GK-933IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
CY7C1318SV18-250BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT41J256M16LY-091G:NFlip Electronics |
IC DRAM 4GBIT PAR 1GHZ 96FBGA |
|
CAT25010YI-GRochester Electronics |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
|
M95640-WDW6TPSTMicroelectronics |
IC EEPROM 64KBIT SPI 8TSSOP |
|
CAT25010VI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 20MHZ 8SOIC |
|
BR24G04FV-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 8SSOPB |
|
MX25U4035FZUIMacronix |
IC FLASH 4MBIT SPI/QUAD 8USON |
|
70V38L20PFGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
CY7C1041BNV33L-12VXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
