类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25Q64CFIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 16SOP |
|
93C46B-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AS7C31025B-12TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT24C32D-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
CY7C1480V33-167AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
24LC64T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DFN |
|
93C46/JRochester Electronics |
1K BIT MICROWIRE SERIAL EEPROM |
|
CY7B139-35JIRochester Electronics |
DUAL-PORT SRAM, 4KX9, 35NS, |
|
IS64LPS12832A-200TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
71V416S15YGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
93C46B-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
24LC16BHT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
93LC66A-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |