类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C46B-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
24LC16BHT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
93LC66A-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
S25FL256LAGBHI020Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
AT28HC256E-90FM/883Rochester Electronics |
IC EEPROM 256KBIT PAR 28FLATPK |
|
CY7C09359AV-9AXCRochester Electronics |
IC SRAM 144K PARALLEL 100TQFP |
|
IS46TR16256BL-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
5962-9089901MYARochester Electronics |
FLASH, 128KX8, 250NS, CQCC32 |
|
MX25R4035FZUIL0Macronix |
IC FLSH 4MBIT SPI/QUAD I/O 8USON |
|
71V416S12BEG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
DS1230AB-70IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
25LC160DT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8TDFN |
|
S25FL256SDPBHIC13Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |