类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 2.5V ~ 6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V631S10BFGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
|
S26KL512SDABHI030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
24AA128T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MSOP |
|
IS61C5128AS-25TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
47L04T-I/STRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8TSSOP |
|
24LC025-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
RM24C64AF-7-GCSI-TAdesto Technologies |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |
|
GS8162Z36DGD-250IVGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
SST39VF6402B-70-4I-B1KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
IS42S32200L-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
CY7C1243KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
NDS36PT5-16ITInsignis Technology Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
CAT93C56V-1.8TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |