类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | - |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT93C56V-1.8TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
S29GL128S10FHI020ARochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V124SA12PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY62256LL-70ZXCTRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
W25X40CLZPIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
IS42S32160D-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS45S16100H-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
70V3579S4BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
IS43R16160D-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
IS61LPS102418B-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AS4C8M16D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
IS43R86400E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
GS8182T36BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |