English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1LP0408DSB-7SI#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY62128BNLL-70SCRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
24LC014H-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
CY7C1371D-100AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CAT24WC04W-TE13Rochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
IS43TR16128BL-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
UPD44647186AF5-E22-FQ1Rochester Electronics |
IC SRAM 72MBIT PARALLEL 165PBGA |
|
IS45S32800J-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AS7C34096A-20JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MX29GL320ETXEI-70GMacronix |
IC FLASH 32MBIT PARALLEL 48LFBGA |
|
R1LP0108ESN-5SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
71V016SA20PHG1Rochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MX25R2035FM1IH0Macronix |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
