类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS64WV6416EEBLL-10CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
S25FL128LDPMFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
GVT71256G18T-5Rochester Electronics |
IC SRAM 4.5MBIT 133MHZ |
|
AT25DF011-XMHN-BAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8TSSOP |
|
MT29F2G08ABAEAH4-AITX:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V3577S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FM27C010VE150Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS61NLP102418B-250B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
BR25H080FJ-WCE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SOPJ |
|
MT58L256L32PS-6Rochester Electronics |
CACHE SRAM, 256KX32, 3.5NS PQFP1 |
|
UPD44645182AF5-E40-FQ1Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
71V416S15BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1007BN-15VXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 28SOJ |