English
简体中文
IC SRAM 1MBIT PARALLEL 28SOJ
IC MEMORY NOR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (1M x 1) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25H010FJ-WCE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 5MHZ 8SOPJ |
|
AS7C31024B-20TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS43R16320D-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C1020CV33-10ZCRochester Electronics |
STANDARD SRAM, 32KX16 |
|
IS45S16320D-7CTLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
IS43TR16128BL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY62256NLL-55ZRXERochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
S25FL064LABMFB001Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
M24C64-FDW6TPSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
70T3589S133BCIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
5962-9174402MXXRochester Electronics |
UVPROM, 32KX8, CMOS, CDIP28 |
|
71V546S100PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FM25VN10-GTRCypress Semiconductor |
IC FRAM 1MBIT SPI 40MHZ 8SOIC |