English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
23A640T-I/SNRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
SST39VF802C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
SM662GEA BDS TT904Silicon Motion |
FERRI EMMC 16GB 3D TLC + EXT. TE |
|
CAT93C56WI-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
24LC024HT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TDFN |
|
AS4C32M16SB-7TINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
CY7C1513AV18-200BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT45DB321E-SHFHC-TAdesto Technologies |
IC FLASH 32MBIT SPI 85MHZ 8SOIC |
|
AS4C64M16D2A-25BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
S25FL128LAGBHI033Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
24AA64XT/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
M95512-RDW6TPSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
S29GL512P11FFI012Flip Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
