English
简体中文
RELAY GEN PURPOSE DPDT 2A 24VDC
IC SRAM 36MBIT PARALLEL 165FBGA
IC SRAM 9MBIT PARALLEL 119PBGA
8D 43C 23#20 20#16 SKT J/N
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61WV5128EDBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT24C128C-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8UDFN |
|
DS2502G+UMaxim Integrated |
IC EPROM 1KBIT 1-WIRE 2SFN |
|
IS43TR16640A-125JBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
W29GL512PL9BWinbond Electronics Corporation |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
71V65603S100BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
24AA64FT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
24LC1026-I/PRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8DIP |
|
IS42S16160G-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
DS1220AB-120+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
IS43R32400E-4BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
CY7C1426JV18-300BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
93AA66BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |