English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2.6 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V3556S133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W988D2FBJX6E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
CAT24C512YIGT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 8TSSOP |
|
NDL26PFG-8KITInsignis Technology Corporation |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S29GL064N90TAI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
S25FL128SDSMFN003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS7C316096C-10BINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
FM25V02-DGRochester Electronics |
IC FRAM 256KBIT SPI 40MHZ 8TDFN |
|
MT55L512Y36PT-6Rochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
71321LA20TFG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
25LC020A-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8DIP |
|
X28C010FM-12Rochester Electronics |
EEPROM, 128KX8, PARALLEL |
|
IS43DR86400E-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
