类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL256LDPBHN023Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
BQ4011MA-150Rochester Electronics |
IC NVSRAM 256KBIT PARALLEL 28DIP |
|
AT93C46EN-SH-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
24LCS21A/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
IS64LPS102436B-166B3LA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
CY62136VLL-70ZIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
GT28F320B3TA110 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
BR25H010F-2CE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 10MHZ 8SOP |
|
MX29GL256FUT2I-11GMacronix |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT25DN256-XMHF-BAdesto Technologies |
IC FLASH 256KBIT SPI 8TSSOP |
|
CY7C1312BV18-167BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY62146EV30LL-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93LC66BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |