类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 8Mb (1M x 8, 512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71T75602S166PFRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
|
IS61NLF25618A-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT44K16M36RB-093F:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
GS82564Z36GB-250IGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
CY7C1345B-100BGIRochester Electronics |
CACHE SRAM, 128KX36, 8NS |
|
CY7C1565KV18-550BZXCCypress Semiconductor |
NO WARRANTY |
|
71V124HSA10PHRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
FM24C17UM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
71V65803S150BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
FM24C256LENRochester Electronics |
IC EEPROM 256KBIT I2C 8DIP |
|
IS43TR16256AL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
71V3556SA150BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C12681KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |