类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR93G86F-3AGTE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 3MHZ 8SOP |
|
IS46TR16128CL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
11AA040T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8SOIC |
|
24AA02E48T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-5 |
|
M24128-DRMN3TP/KSTMicroelectronics |
IC EEPROM 128KBIT I2C 1MHZ 8SO |
|
CY62256NLL-70SNIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
CY7C1268KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT53E128M32D2DS-046 AAT:AMicron Technology |
IC DRAM 4GBIT 2.133GHZ 200WFBGA |
|
AS6C8008-55BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
IS25WP064A-RMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY62256LL-55ZXERochester Electronics |
STANDARD SRAM, 32KX8, 55NS |
|
EDB5432BEBH-1DAAT-F-DMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
CY7C106B-25VCTRochester Electronics |
STANDARD SRAM, 256KX4, 25NS |