English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA014-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
71T75802S200BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AS4C128M8D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
BR24G64FVM-3GTTRROHM Semiconductor |
IC EEPROM 64KBIT I2C 8MSOP |
|
71V67603S133PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS43TR16128DL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IS61LV6416-10TLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
M95320-DFMC6TGSTMicroelectronics |
IC EEPROM 32KBIT SPI 20MHZ 8MLP |
|
S25FL127SABNFB103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1019CV33-15VXCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
93LC76C-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
LE24L042CS-LV-TFM-ERochester Electronics |
TWO WIRE SERIAL INTERFACE EEPROM |
|
AT24C02C-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
