类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V657S12BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
IS43R86400D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MX25L25673GZNI-10GMacronix |
IC FLSH 256MBIT SPI 120MHZ 8WSON |
|
CY7C1614KV18-333BZCRochester Electronics |
QDR SRAM, 4MX36, 0.45NS, CMOS, P |
|
LE24CB642MC-AERochester Electronics |
IC EEPROM 64KBIT I2C 400KHZ 8MFP |
|
25LC256XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8TSSOP |
|
7164S20TPGRochester Electronics |
IC SRAM 64KBIT PARALLEL 28DIP |
|
AS7C256A-20JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AT28HC64B-12SU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
CY7C09089V-12ACRochester Electronics |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
CY7C199CN-12ZXCRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY14E256Q5A-SXQRochester Electronics |
IC NVSRAM 256KBIT SPI 8SOIC |
|
CY7C0832AV-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 120TQFP |