类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71P72804S200BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
CAT24C04HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8UDFN |
|
SST25PF040C-40E/MFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
CY7C1426KV18-300BZCRochester Electronics |
QDR SRAM, 4MX9, 0.45NS, CMOS, PB |
|
CAT25128XIRochester Electronics |
IC EEPROM 128KBIT SPI 8SOIC |
|
IS46LR16320C-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CAT24C256WI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IS61WV3216BLL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 512KBIT PAR 44TSOP II |
|
CAT24C02LI-GRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
IS42RM32400H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CAT28LV64H13I-15Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
24AA32A-I/PRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
IS62WV51216BLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |