类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FM27C010VE120Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
MT53E256M32D2DS-046 IT:B TRMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
SST39VF800A-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1518KV18-300BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
24C02CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C1525KV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C256E-25UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
FM34W02UM8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
70V9169L7PFGI8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
M48Z32V-35MT1FSTMicroelectronics |
IC NVSRAM 256KBIT PARALLEL 44SO |
|
24AA024T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
S70GL02GT11FHV013Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
M95080-DRMN3TP/KSTMicroelectronics |
IC EEPROM 8KBIT SPI 20MHZ 8SO |