类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M5M5V108DFP-70HIBTRochester Electronics |
SRAM 1M-BIT (128K X 8) |
|
FM28V100-TGTRCypress Semiconductor |
IC FRAM 1MBIT PARALLEL 32TSOP I |
|
S-24C512CI-T8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT I2C 8TSSOP |
|
AS4C8M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
CAT24WC66LIRochester Electronics |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
BR24S16F-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY7C4122KV13-933FCXCRochester Electronics |
QDR SRAM, 8MX18 PBGA361 |
|
MT58L512L18FS-10ITRochester Electronics |
CACHE SRAM 512KX18 10NS PQFP100 |
|
AT25320A-10TQ-2.7Rochester Electronics |
EEPROM, 4KX8, SERIAL, CMOS |
|
CY62128VLL-55ZITRochester Electronics |
SRAM 1M-BIT 128K X 8 55NS |
|
S25FS512SDSMFV013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S29GL032N90BAI030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
GS8673ET18BGK-675IGSI Technology |
IC SRAM 72MBIT PARALLEL 260BGA |