类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (512 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA160DT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
SST39LF802C-55-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C11681KV18-450BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
25LC160C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
AS4C128M16D3LC-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT 800MHZ 96FBGA |
|
IS43TR16640B-125JBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CAT64LC40WI-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
GVT71256G18T-3Rochester Electronics |
STANDARD SRAM, 256KX18 |
|
S29AL016J70TFA010Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MT29F1G08ABAEAH4-AATX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
CY62146GN30-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62137EV30LL-45BVXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
CAT28C64BKI-15Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |