类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25VE40CSIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
AT45DB161E-SSHD2B-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8SOIC |
|
25LC080AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
GD25Q20CSIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
S29GL01GS11FHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
BR25G128FVT-3GE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 8TSSOPB |
|
24AA64-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
MR2A08AMA35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 48FBGA |
|
BR24T16FVJ-WE2ROHM Semiconductor |
IC EEPROM 16K I2C 400KHZ 8TSSOP |
|
CY7C1366S-166BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CAT24C16WIRochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
CY7C1415KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR93LC46F-WE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 8SOIC |