English
简体中文
IC DRAM 4GBIT PARALLEL 96FBGA
IC EEPROM 256KBIT I2C 8DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS26KS128S-DPBLI00ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 24VFBGA |
|
AS6C2016-55ZINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS4C512M16D3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IS66WVE4M16EALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
S29GL01GS11DHAV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
UPD46184184BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
AT28C256E-15SURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
S29CL016J0MQFM030Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
SST26VF032-80-5I-S2AERoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
24AA64FT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
24LC32AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
S25FL128SDPBHIC00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
AT28C010-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |