类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB321E-MWHF2B-TAdesto Technologies |
IC FLASH 32MBIT SPI 85MHZ 8VDFN |
|
24CW160T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
NM24C65ULNRochester Electronics |
IC EEPROM 64KBIT I2C 100KHZ 8DIP |
|
CY7C1320SV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
71V67803S166BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S29GL064N90BFI033Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
MX25U8033EZNI-12GMacronix |
IC FLSH 8MBIT SPI/QUAD I/O 8WSON |
|
BR24G04F-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |
|
W94AD6KBHX5I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
CAT24C64HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8UDFN |
|
24AA512-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
IS46R16320E-6TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
AT24MAC402-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |