English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L256V36PT-7.5Rochester Electronics |
CACHE SRAM, 256KX36, 4NS PQFP100 |
|
CY7S1041G30-10ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
BR24G512FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOPJ |
|
70V7519S166BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
W25N512GVEIGWinbond Electronics Corporation |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
GS81280Z18GT-250IGSI Technology |
IC SRAM 144MBIT PARALLEL 100TQFP |
|
AT24CS64-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
MT53E384M32D2DS-053 AIT:EMicron Technology |
IC DRAM 12GBIT 1.866GHZ 200WFBGA |
|
70V659S15BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
BR24L02FVM-WTRROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
BQ4010LYMA-70NRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
S25FL256LAGMFV001Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S29GL032N11FFIV13Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
