类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25C160-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
70V631S12PRFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
CYD02S36V-133BBCRochester Electronics |
DUAL-PORT SRAM, 64KX36 |
|
S29VS064RABBHI010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
|
24VL024T/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
IS25WP128-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI 16SOIC |
|
S25FS256SAGBHI203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
70V3569S5BCRenesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
AS7C3513B-10JCNAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
AS4C128M32MD2A-25BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
IS46TR16128C-15HBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
BR93L56RF-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
STK12C68-L45IRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28LCC |