类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29AS016J70TFI040Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CAV25640YE-GT3Rochester Electronics |
IC EEPROM 64KBIT SPI 8TSSOP |
|
CY7C1415KV18-250BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24LC21/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S29GL032N11FFIV20ARochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT48LC64M8A2P-75:C TRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT93C56A-10SQ-2.7Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS43TR16512B-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96TWBGA |
|
CY7C1525KV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1484BV33-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61WV5128BLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SST26VF016B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
BR93A66RFVT-WME2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB |