类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.71V ~ 1.89V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-LFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25DF021A-XMHNHR-TAdesto Technologies |
IC FLASH 2MBIT SPI 85MHZ 8TSSOP |
|
AT25DF041B-XMHNHR-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8TSSOP |
|
W9864G2JB-6I TRWinbond Electronics Corporation |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
S-93L56AR0I-J8T1UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
MX66U1G45GMI00Macronix |
IC FLASH 1GBIT SPI/QUAD 16SOP |
|
71V016SA10YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
MT58L64L36PT-6Rochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
MT58L256L18P1T-7.5Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1370SV25-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
FM93C46LZMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
CY62167G30-55BVXETCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
UPD46185182BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
S29GL01GS11FHIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |