English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS28EC20P+Maxim Integrated |
IC EEPROM 20KBIT 1-WIRE 6TSOC |
|
SST39VF1602C-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
W25Q64JVSFIM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
71V424S15YRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S29GL512P10FFCR10Flip Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
|
BQ2022ALPRRochester Electronics |
IC EPROM 1KBIT SGL WIRE TO92-3 |
|
W988D2FBJX6I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
S29GL512N10FFAR20Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
25AA02E48T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
S25FS512SDSNFV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
IS61LPS12836EC-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
CY14B101J2-SXICypress Semiconductor |
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
IS45S32200L-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
