English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GS8128436GB-250IGSI Technology |
IC SRAM 144MBIT PAR 119FPBGA |
|
24AA044-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8MSOP |
|
IS61C25616AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL256S90FHSS53Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
93AA56BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
CY15B004J-SXATCypress Semiconductor |
IC FRAM 4KBIT I2C 1MHZ 8SOIC |
|
CY14B104NA-ZSP45XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 54TSOP II |
|
IS43R16320F-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
25LC040AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
SFEM032GB1EA1TO-I-HG-12P-STDSwissbit |
IC FLASH 256GBIT EMMC 153BGA |
|
7130SA35CRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
AS7C34098A-15TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
71256SA15YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
