English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V65703S85BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
FM93C46VM8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
AS7C31026B-15TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
SST39LF801C-55-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
25LC160C-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
S29GL512T11DHB013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
W979H6KBVX2I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PAR 134VFBGA |
|
IS61QDP2B21M36A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CAT28LV65W25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
S29GL128P11TFIV20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
24FC08T-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
MX25L6445EM2I-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 8SOP |
|
MT53E256M32D2DS-046 IT:BMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
