类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | - |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS2502X1#URochester Electronics |
IC EPROM 1KBIT 1-WIRE 4WLP |
|
S29GL256S10TFA023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
CAT93C86VIRochester Electronics |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
MT58L256L18P1T-5Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1418BV18-250BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C09379V-12AXCRochester Electronics |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
24LC02BH-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS61WV6416BLL-12KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
UPD46185362BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
24LC21AT/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
CY15B256J-SXECypress Semiconductor |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC |
|
AT28C256E-25FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
71V416S15BEG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |