English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-CABGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71024S15YIRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
CAT25256VI-GRochester Electronics |
IC EEPROM 256KBIT SPI 8SOIC |
|
25LC080CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
7164S20YGRochester Electronics |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
93C56B-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
CAT28F001N-12BRochester Electronics |
CAT28F001 - 1 MEGABIT BOOT BLOCK |
|
IS43R86400D-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1570KV18-450BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C010-12TURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
R1LV0108ESF-5SI#S1Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
CY7C2265KV18-550BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
23K256-I/SNRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8SOIC |
|
IS64LF25636A-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
