类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 550 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23K256-I/SNRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8SOIC |
|
IS64LF25636A-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
S29GL512T10DHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
M95320-DRMN8TP/KSTMicroelectronics |
IC EEPROM 32KBIT SPI 20MHZ 8SO |
|
S29GL256S90DHSS30Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MX25U1001EMI-14GMacronix |
IC FLASH 1MBIT SPI/DUAL I/O 8SOP |
|
CY7C2563KV18-400BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70T3719MS166BBGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 324PBGA |
|
24LC64FT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
IS61VPS204836B-250TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
IS61DDPB24M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
IS42S32200L-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
IS42S32200L-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |