English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-SOIC (0.445", 11.30mm Width) |
| 供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1612KV18-333BZXCRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
CY7C1007D-10VXIRochester Electronics |
STANDARD SRAM, 1MX1, 10NS PDSO28 |
|
043641QLAD-4Rochester Electronics |
256KX18 SRAM |
|
71V65603S133BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
NM93C46AEM8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
AT28HC256-70TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
25LC512-E/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
CY7C1420BV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C128M8D1-6TINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 66TSOP II |
|
AT27C020-90JU-TRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
CY62127DV30LL-70ZITRochester Electronics |
SRAM CHIP ASYNC SINGLE 2.5V/3.3V |
|
R1LP0408DSP-7SR#B0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
70V7319S166BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
