类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61VPS102418B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
S70FL01GSDSBHMC10Cypress Semiconductor |
IC FLSH 1GBIT SPI/QUAD I/O 24BGA |
|
HM1-6508/883Rochester Electronics |
1024 X 1 CMOS SRAM |
|
IS46DR16320C-25DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
AT25SF161-MHD-TAdesto Technologies |
IC FLASH 16MBIT SPI 104MHZ 8UDFN |
|
CY7C1363S-133AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C32-FMN6TPSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8SO |
|
MT25QU128ABA1EW7-0SITMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
IS43DR86400C-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
24FC08-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8MSOP |
|
M93C56-RDW6TPSTMicroelectronics |
IC EEPROM 2KBIT SPI 1MHZ 8TSSOP |
|
S29GL256P90FFSS70Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S70FL01GSAGBHIC10Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |