类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 120 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C4M16SA-6BANTRAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
S40410081B1B2W000Rochester Electronics |
FLASH, 8GX8, PBGA100 |
|
CY7C1021CV33-8BAXCRochester Electronics |
STANDARD SRAM, 64KX16, 8NS |
|
AT24CS04-SSHM-BRochester Electronics |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
CAT93C46BHU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 4MHZ 8UDFN |
|
7132LA20JG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CAT24C01YGIRochester Electronics |
IC EEPROM 1KBIT I2C 8TSSOP |
|
IS46R16160D-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
S34ML08G301TFI003Cypress Semiconductor |
IC FLSH 8GBIT PARALLEL 48TSOP |
|
MT53E128M32D2DS-046 AAT:A TRMicron Technology |
IC DRAM 4GBIT 2.133GHZ 200WFBGA |
|
MX25L25735FZ2I-10GMacronix |
IC FLSH 256MBIT SPI 104MHZ 8WSON |
|
24LCS22A-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
FM93C66EMT8Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |