English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WFDFN Exposed Pad |
| 供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS66WV51216EBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
24AA00T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8SOIC |
|
AT28HC256E-12SURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
CY7C11501KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAV93C46YE-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CAT24C512YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 8TSSOP |
|
CY7C1460KV25-167AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
71V65603S100BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
24AA02E64T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
DS28E05P+Maxim Integrated |
IC EEPROM 896B 1-WIRE 6TSOC |
|
GT28F320C3TA100SB93 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
IS43R16160F-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CAT25C16SIRochester Electronics |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
